Electronic transport in perylenetetracarboxylic dianhydride: The role of In diffusion
Identifieur interne : 00E277 ( Main/Repository ); précédent : 00E276; suivant : 00E278Electronic transport in perylenetetracarboxylic dianhydride: The role of In diffusion
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Abstract
Electronic transport measurements of Ag/3,4,9,10-perylenetetracarboxylic dianhydride In/Si(001) heterostructures demonstrate that when the structure temperature approaches the In melting point a current-voltage characteristic changes from rectifying to ohmic. The synchrotron radiation photoemission investigation of the 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) layers of the same thickness grown on In in the same temperature range show strong In diffusion throughout the PTCDA layers as thick as 1 μm. The formation of In-related coordination compound appears to be limited to the region near the In/PTCDA interface. © 2002 American Vacuum Society.
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A. Vacuum, surfaces, and films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chemical interdiffusion</term><term>Diffusion</term><term>Elemental semiconductors</term><term>Experimental study</term><term>Indium</term><term>Melting points</term><term>Ohmic contacts</term><term>Organic semiconductors</term><term>Photoemission</term><term>Rectification</term><term>Semiconductor-metal boundaries</term><term>Silicon</term><term>Silver</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7340N</term><term>7340E</term><term>6630N</term><term>7960J</term><term>Etude expérimentale</term><term>Semiconducteur organique</term><term>Argent</term><term>Effet redresseur</term><term>Contact ohmique</term><term>Indium</term><term>Silicium</term><term>Semiconducteur élémentaire</term><term>Point fusion</term><term>Photoémission</term><term>Diffusion(transport)</term><term>Interface métal semiconducteur</term><term>Diffusion mutuelle chimique</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Argent</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Electronic transport measurements of Ag/3,4,9,10-perylenetetracarboxylic dianhydride In/Si(001) heterostructures demonstrate that when the structure temperature approaches the In melting point a current-voltage characteristic changes from rectifying to ohmic. The synchrotron radiation photoemission investigation of the 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) layers of the same thickness grown on In in the same temperature range show strong In diffusion throughout the PTCDA layers as thick as 1 μm. 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